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| CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT NPN Silicon Transistor VOLTAGE 60Volts CURRENT 3 Ampere CHT5824XPT FEATURE *Surface mount package. (SC-62/SOT-89) *High speed switching *Low saturation voltage *Strong discharge power for inductive load and capacitance load SC-62/SOT-89 4.6MAX. 1.7MAX. 1.6MAX. 0.4+0.05 2.5+0.1 +0.08 0.45-0.05 +0.08 0.40-0.05 1.50+0.1 +0.08 0.40-0.05 1.50+0.1 1 1 Base 2 3 CIRCUIT (1) B C (2) 2 Collector ( Heat Sink ) 3 Emitter E(3) 0.8MIN. 4.6MAX. Dimensions in millimeters SC-62/SOT-89 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL VCBO VCEO VEBO IC PARAMETER collector-base voltage collector-emitter voltage emitter-base voltage collector current (DC) Tamb 25 C; note 1 Tamb 25 C; note 2 CONDITIONS open emitter open base open collector - - - - - - -55 - -55 MIN. MAX. 60 60 6 3 500 2000 +150 150 +150 V V V A mW mW C C C 2007-06 UNIT Ptot Tstg Tj Tamb Note total power dissipation storage temperature junction temperature operating ambient temperature 1. Pw=100mS 2. Each terminal mounted on a recommended land. RATING CHARACTERISTIC CURVES ( CHT5824XPT ) CHARACTERISTICS Tamb = 25 C unless otherwise specied. SYMBOL ICBO ICEO IEBO hFE PARAMETER collector cut-off current collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage collector output capacitance transition frequency CONDITIONS VCB = 40V,IE=0 VCE=50V,IB=0 VEB=4V ,IC=0 IC = 100 mA; VCE = 2V MIN. - - - 120 - MAX. 1.0 1.0 1.0 UNIT uA uA uA 390 VCE(sat) IC = 20 00 mA; IB = 200 m A IE = 0 ; VCB = 1 0 V; f = 1 M H Z IC = 100 mA; VCE = 1 0 V f=10MHZ 0.5 - - V pF MHz Cob fT 20(typ) 200(typ) Note : Pulse test: tp 300uSec; 0.02. |
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